461 results found for MIL-STD
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
The purpose of this test is to describe requirements for performance of destructive physical analysis (DPA) for the applicable device class, for sampling, preparation,...
DLA
Method
1 /
Active
The burn-in test is performed for the purpose of screening or eliminating marginal devices, those with inherent defects or defects resulting from manufacturing...
DLA
Method
12 /
Active
DLA
Detail / Drawing
R / -
Active
This test method is performed to determine whether semiconductor device terminations can withstand the effects of the heat to which they will be subjected during the...
DLA
Method
5 / A w/Change5
Active
The purpose of this test is to measure the time required for the junction to reach 90 percent of the final value of junction temperature change following application...
DLA
Method
/ w/Change1
Active
The purpose of this test is to measure the thermal impedance of the insulated gate bipolar transistors (IGBT) under the specified conditions of applied voltage,...
DLA
Method
/ w/Change1
Active
This test method is intended to detect any semiconductor device discontinuity "ringing" or shifting of the reverse dc voltage characteristic monitored during vibration.
DLA
Method
/ A w/Change4
Active
The purpose of this test is to measure the thermal resistance of thyristors under specified conditions
DLA
Method
/ w/Change1
Active
The purpose of this test is to measure the gate reverse current of the field effect transistor or IGBT under the specified conditions.
DLA
Method
1 / w/Change1
Active
This test is conducted to determine the suitability of connectors and connector assemblies when subjected to shocks such as those expected from rough handling,...
DLA
Method
1 / A
Cancelled