460 results found for MIL-STD
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
DLA
Detail / Drawing
B / -
Active
The purpose of this test is to determine if the breakdown voltage of the device under the specified conditions is greater than the specified minimum limit.
DLA
Method
1 / w/Change1
Active
DLA
Detail / Drawing
- / -
Active
DLA
Detail / Drawing
F / -
Active
The purpose of this test method is to verify that design and construction of a semiconductor device are the same as those documented in the qualified design report and...
DLA
Method
1 / A w/Change4
Active
This test method is intended to detect any semiconductor device discontinuity "ringing" or shifting of the forward dc voltage characteristic monitored during shock.
DLA
Method
/ A w/Change4
Active
The purpose of this test is to measure the thermal resistance of the MOSFET under the specified conditions of applied voltage, current, and pulse width.
DLA
Method
/ w/Change1
Active
ESCC
Detail / Drawing
3 / -
Active
This test method describes detail procedures and evaluation guidelines for the destructive physical analysis (DPA) of commonly specified diodes.
DLA
Method
5 / A w/Change4
Active
The purpose of this test is to measure the thermal resistance of the device under the specified conditions.
DLA
Method
/ w/Change1
Active