461 results found for MIL-STD

The purpose of this test is to measure the pulse response (td(on), tr, td(off), and tf) of the field effect transistor under the specified conditions.

This section describes detailed requirements for a DPA of commonly used diodes. These requirements supplement the general requirements in section 4.

The purpose of this test is to measure the forward-current transfer ratio cut off frequency under the specified conditions.

This test method provides a means of judging the relative resistance of glass encapsulated semiconductor devices to cracking under conditions of thermal stress. It...

The purpose of this test is to verify that the amount of Lead (Pb) in Tin-Lead (Sn-Pb) alloys and electroplated finishes contain at least 3 weight percent (wt%) Lead...

Radiographic inspection is generally a nondestructive (see 1.2) method for detecting internal physical defects in small component parts which are not otherwise visible.

The purpose of this test is to determine the ability of mated wired Connector (plug and receptacle) to resist flame, passing through the connector for 20 minutes or...

The purpose of this test is to determine the strength of the element attachment system when subjected to force in the Y1 axis. This method is applicable to...

The purpose of this test method is to measure the gate-controlled turn-off time of the device under the specified conditions.