460 results found for MIL-STD
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
The purpose of this test method is to determine the quality of an oxide layer as indicated by capacitance-voltage (C/V) measurements of a metal-oxide semiconductor...
DLA
Method
/ w/Change1
Active
The purpose of this test is to determine the capability of the device to withstand a single pulse
DLA
Method
1 / w/Change3
Active
The purpose of this test is to measure the dc gate-trigger voltage or dc gate-trigger current.
DLA
Method
1 / w/Change3
Active
The purpose of this test is to measure the figure of merit of a semiconductor detector diode.
DLA
Method
1 / w/Change3
Active
This section describes detailed requirements for a DPA of commonly used flexible heaters. These requirements supplement the general requirements in section 4.
DLA
Method
/ C
Active
The dust test is used during the development, test, and evaluation of equipment to ascertain their ability to resist the effects of a dry dust (fine sand) laden...
DLA
Method
/
Active
The purpose of the contact resistance test is to determine the resistance offered to a flow of current during its passage between the electrical contacting surfaces of...
DLA
Method
/
Active
This test method is proposed as an accelerated laboratory corrosion test simulating the effects of seacoast atmosphere on semiconductor devices.
DLA
Method
3 / A w/Change4
Active
This section describes detailed requirements for a DPA of commonly used filters. These requirements supplement the general requirements in section 4.
DLA
Method
/ C
Active
The purpose of this test is to verify that the markings will not become illegible on the component parts when subjected to solvents.
DLA
Method
14 /
Active