460 results found for MIL-STD

This method establishes the procedure for classifying microcircuits according to their susceptibility to damage or degradation by exposure to electrostatic discharge...

The purpose of this test is to determine if the breakdown voltage of the field effect transistor or IGBT under the specified conditions is greater than the specified...

The purpose of this test is to measure the input admittance of the field-effect transistor under the specified small-signal conditions.

The purpose of this examination is to nondestructively detect defects within the sealed case, especially those resulting from the sealing process, and internal defects...

HS1840ARH 16-channel. Parts were tested at low and high dose rate under biased and unbiased conditions as outlined in MIL-STD-883 Test Method 1019.7, to a maximum...

The purpose of this test method is to measure directly the charge recovered from a semiconductor diode when it is rapidly switched from a forward biased condition to a...

This test is conducted to determine the resistance of a part to extremes of high and low temperatures, and to the effect of alternate exposures to these extremes.

The purpose of this test is to measure the gate-to-source voltage or current of the field effect transistor or IGBT under the specified conditions.

High dose rate testing to 300 krad(Si) . Low dose rate testing to 150 krad(Si) . The high dose rate irradiations were done at 65 rad(Si)/s and the low dose rate work...