461 results found for MIL-STD

Both the IS-139ASRH and IS-139ASEH are wafer-by-wafer assurance tested per MIL-STD-883H at 300krad(Si) of HDR (50 to 300 rad(Si)/s. Only the IS-139ASEH is...

The purpose of this test method is to determine the avalanche capability of diodes and rectifiers. The intent of the test is to stress the termination of the device.

This method tests the capability of a Plastic Encapsulated Microcircuit (PEM) to withstand moisture ingress and to detect flaws in packaging materials.

This method establishes the means for assuring circuit performance in regard to the test requirements necessary to verify the specified function and to assure that all...

This method provides a means of judging the quality and acceptability of device interconnect metallization on non-planar oxide integrated circuit wafers or dice.

This section describes detailed requirements for a DPA of commonly used quartz crystals. These requirements supplement the general requirements in section 4.

The purpose of this test method is to subject the device under test (DUT) to high current stress conditions to determine the ability of the device chip and contacts to...

The purpose of this test method is to eliminate marginal or defective semiconductor devices by operating them at specified screening conditions which reveal electrical...

This method establishes the means for assuring circuit performance to the limits specified in the applicable acquisition document in regard to output leakage current...

This test is to measure the resistance offered by the insulating members of a component part to an impressed direct voltage tending to produce a leakage of current...