460 results found for MIL-STD
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
The purpose of this test method is to determine compliance with the specified lambda for semiconductor devices subjected to the specified conditions.
DLA
Method
1 / A w/Change4
Active
The purpose of this test is to determine the effects of vibration within the predominant or random vibration frequency ranges and magnitudes that may be encountered...
DLA
Method
2 / A
Cancelled
The purpose of this test is to determine the extrapolated unity-gain frequency (gain-bandwidth product) of the device under the specified conditions.
DLA
Method
1 / w/Change1
Active
This test procedure specifies the methods by which fault coverage is reported for a test program applied to a microcircuit herein referred to as the device under test...
DLA
Method
1 /
Active
The purpose of this test is to determine the effect on microelectronic devices of storage at elevated temperatures without electrical stress applied.
DLA
Method
2 /
Active
The purpose of this test is to measure the input capacitance of the field effect transistor under the specified small-signal conditions.
DLA
Method
/ w/Change1
Active
The purpose of this test is to measure the drain current of the field effect transistor or IGBT under the specified conditions.
DLA
Method
1 / w/Change1
Active
The high frequency vibration test is performed for the purpose of determining the effect on component parts of vibration in the frequency ranges of 10 to 500 hertz...
DLA
Method
/
Active
This test is conducted for the purpose of determining the suitability of component parts and subassemblies of electrical and electronic components when subjected to...
DLA
Method
/
Active
This method establishes the procedure for classifying microcircuits according to their susceptibility to damage or degradation by exposure to electrostatic discharge...
DLA
Method
9 /
Active