460 results found for MIL-STD
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
The purpose of this test method is to verify the workmanship of packaged devices. This test method shall also be utilized to inspect for damage due to handling,...
DLA
Method
14 /
Active
The purpose of this test is to determine the mechanical forces required to mate and unmate electrical connectors, or protective caps with connectors, before and after...
DLA
Method
1 / A
Cancelled
The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to nonionizing energy loss (NIEL) degradation.
DLA
Method
3 /
Active
The purpose of this test is to determine if the breakdown voltage of the field effect transistor or IGBT under the specified conditions is greater than the specified...
DLA
Method
1 / w/Change1
Active
The purpose of this test method is to check the materials, design, construction, and workmanship of discrete semiconductor diodes and other two-terminal semiconductor...
DLA
Method
6 / A w/Change4
Active
DLA
Detail / Drawing
E / -
Active
The purpose of this test method is to determine the effect on the semiconductor device of vibration in the frequency range specified.
DLA
Method
2 / A w/Change5
Active
Mechanical Test Methods for Semiconductor Devices Part 2: Bond strength (destructive bond pull test)
The purpose of this test method is to measure bond strengths, evaluate bond strength distributions, or determine compliance with specified bond strength requirements...
DLA
Method
1 / A w/Change5
Active
The purpose of this test is to measure the temperature rise per unit power dissipation of the designated junction above the case of the device or ambient temperature,...
DLA
Method
/ w/Change1
Active
The purpose of this test method is to detect loose particles inside a semiconductor device cavity. The test provides a nondestructive means of identifying those...
DLA
Method
5 / A w/Change5
Active