461 results found for MIL-STD
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
The purpose of this test is to determine if the breakdown voltage of the gallium arsenide field effect transistor under the specified conditions is greater than the...
DLA
Method
/ w/Change1
Active
This method establishes the means for assuring circuit performance to the limits specified in the applicable acquisition document in regard to output short circuit...
DLA
Method
1 /
Active
The purpose of this test is to measure the dc reverse gate current of the device at a specified reverse gate voltage.
DLA
Method
/ w/Change3
Active
The purpose of this examination is to verify that internal materials, design and construction are in accordance with the applicable acquisition document.
DLA
Method
/
Active
This test method is to determine the ability of semiconductor devices to withstand the effect of thermal stress and rapid dimensional change on internal structural...
DLA
Method
1 / A w/Change4
Active
The purpose of this test is to simulate a form of field abuse of contacts during test by inserting probes into connectot socket contacts.
DLA
Method
1 / A
Cancelled
The purpose of this test method is to measure strengths of bonds external to leadless microelectronic packages (e.g., solder bonds from chip carrier terminals to...
DLA
Method
1 /
Active
The random-drop test is used to determine the effects on component parts of random, repeated impact due to handling, shipping, and other field service conditions.
DLA
Method
/ w/Change 1
Active
This section describes detailed requirements for a Prohibited Material Analysis of external and internal finishes of microelectronic parts and package materials. These...
DLA
Method
/ C
Active
DLA
Detail / Drawing
- / -
Active