460 results found for MIL-STD
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
The purpose of this test method is intended to measure the forward voltage and recovery time of the semiconductor device.
DLA
Method
5 / w/Change3
Active
The purpose of this test is to detemine the connectors resistance to burning when exposed to a flame.
DLA
Method
/ A
Cancelled
The purpose of this test method is to determine compliance with the specified lambda for semiconductor devices subjected to the specified conditions.
DLA
Method
5 / A w/Change4
Active
This method establishes the means for measuring power supply currents of digital microelectronic devices such as TTL, DTL, RTL, ECL, and MOS.
DLA
Method
1 /
Active
The barometric pressure test is performed under conditions simulating the low atmospheric pressure encountered in the nonpressurized portions of aircraft and other...
DLA
Method
/
Active
This test method establishes the means for measuring the steady-state primary photocurrent (IPH) generated in semiconductor devices when these devices are exposed to...
DLA
Method
1 / A w/Change4
Active
This destructive test is intended to determine the integrity of all primary and undercoat lead finishes.
DLA
Method
4 /
Active
The purpose of this method is applicable to power MOSFETs and IGBT.
DLA
Method
2 / w/Change1
Active
This section describes detailed requirements for a DPA of commonly used connectors. These requirements supplement the general requirements in section 4.
DLA
Method
/ C
Active
The purpose of this test is to measure the strength of internal bonds between a semiconductor die and a substrate to which it is attached in a face-bond configuration
DLA
Method
1 /
Active