460 results found for MIL-STD
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
This test method is to determine the ability of semiconductor devices to withstand the effect of thermal stress and rapid dimensional change on internal structural...
DLA
Method
1 / A w/Change4
Active
The purpose of this test is to simulate a form of field abuse of contacts during test by inserting probes into connectot socket contacts.
DLA
Method
1 / A
Cancelled
The purpose of this test method is to measure strengths of bonds external to leadless microelectronic packages (e.g., solder bonds from chip carrier terminals to...
DLA
Method
1 /
Active
The random-drop test is used to determine the effects on component parts of random, repeated impact due to handling, shipping, and other field service conditions.
DLA
Method
/ w/Change 1
Active
This section describes detailed requirements for a Prohibited Material Analysis of external and internal finishes of microelectronic parts and package materials. These...
DLA
Method
/ C
Active
The purpose of this test method is to measure the amount of electrical noise produced by the semiconductor device under vibration.
DLA
Method
1 / A w/Change5
Active
DLA
Detail / Drawing
N / -
Active
The purpose of this test is to qualify the ability of a surface mount package of a semiconductor device to withstand the stresses developed by a thermal mismatch (due...
DLA
Method
/ A w/Change4
Active
DLA
Detail / Drawing
- / -
Active
Product was not tested correctly for Constant Acceleration requirement per MIL-STD-883 TM2001 Condition E
Alert Documents
/
Active