461 results found for MIL-STD

This test is performed to eliminate marginal semiconductor devices or those with defects resulting from manufacturing aberrations that are evidenced as time and stress...

The purpose of this test is to measure the reverse transfer capacitance of the field effect transistor under the specified conditions.

Endurance life is performed in order to demonstrate the quality and reliability of nonvolatile memory devices subjected to repeated write/erase cycles.

This method establishes the means for measuring input bias current and the offset in voltage and current at the input of a linear amplifier with differential inputs....

This method establishes the means for assuring circuit performance to the limits specified in the applicable acquisition document in regard to terminal capacitance....

This section describes detailed requirements for a DPA of commonly used thermistors. These requirements supplement the general requirements in section 4.

These procedures and criteria shall address probe testing and lot acceptance testing, element evaluation or equivalent for each wafer, or wafer lot as applicable...

This test is to measure the resistance offered by the insulating members of a component part to an impressed direct voltage tending to produce a leakage of current...

The purpose of this test is to measure the output admittance of the field-effect transistor under the specified small-signal conditions.

The purpose of this test is to measure the quality factor, commonly called Q, of electronic parts such as capacitors and inductors.