460 results found for MIL-STD
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
This test method is conducted to determine the resistance of a semiconductor device to extremes of high and low temperatures, and to the effect of alternate exposures...
DLA
Method
9 / A w/Change4
Active
The purpose of this test is to verify the boundary of the SOA as constituted by the interdependency of the specified voltage, current, power, and temperature in a...
DLA
Method
1 / w/Change1
Active
This method specifies wafer fabrication control and wafer acceptance requirements for GaAs monolithic microcircuits for application in class level B or class level S...
DLA
Method
1 /
Active
This test is performed to evaluate the properties of materials used in components as they are influenced by the absorption and diffusion of moisture and moisture vapor.
DLA
Method
/
Active
The purpose of this test is to determine the magnitude of the negative resistance under the specified conditions.
DLA
Method
/ w/Change3
Active
Failure analysis is a post mortem examination of failed devices employing, as required, electrical measurements and many of the advanced analytical techniques of...
DLA
Method
/
Active
The salt atmosphere test, in which specimens are subjected to a fine mist of salt solution, has several useful purposes when utilized with full recognition of its...
DLA
Method
/
Active
The purpose of this test method is to determine compliance with the specified sample plan for semiconductor devices subjected to the specified conditions.
DLA
Method
3 / A w/Change4
Active
This method establishes the means for assuring circuit performance to the limits specified in the applicable acquisition document in regard to HIGH level output drive,...
DLA
Method
1 /
Active
This section describes detailed requirements for a DPA of commonly used RF devices. These requirements supplement the general requirements in section 4.
DLA
Method
/ C
Active