460 results found for MIL-STD
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
This section describes detailed requirements for a DPA of commonly used quartz crystals. These requirements supplement the general requirements in section 4.
DLA
Method
/ C
Active
The purpose of this test method is to subject the device under test (DUT) to high current stress conditions to determine the ability of the device chip and contacts to...
DLA
Method
6 / w/Change3
Active
The purpose of this test method is to eliminate marginal or defective semiconductor devices by operating them at specified screening conditions which reveal electrical...
DLA
Method
/ A w/Change4
Active
This method establishes the means for assuring circuit performance to the limits specified in the applicable acquisition document in regard to output leakage current...
DLA
Method
/
Active
This test is to measure the resistance offered by the insulating members of a component part to an impressed direct voltage tending to produce a leakage of current...
DLA
Method
/ A w/Change4
Active
The purpose of this test is to determine the ability of a connector to comply with specified location and retention measurements through the use of location and...
DLA
Method
/ A
Cancelled
This method establishes the means for assuring circuit performance to the limits specified in the applicable acquisition document in regard to HIGH level input load...
DLA
Method
1 /
Active
This section describes detailed requirements for a DPA of commonly used transistors. These requirements supplement the general requirements in section 4
DLA
Method
/ C
Active
The purpose of this test is to measure the amount of electrical noise produced by the device under vibration.
DLA
Method
1 /
Active
The purpose of the test is to measure the forward transadmittance of the field effect transistor under the specified small-signal conditions.
DLA
Method
/ w/Change1
Active