460 results found for MIL-STD
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
The high frequency vibration test is performed for the purpose of determining the effect on component parts of vibration in the frequency ranges of 10 to 500 hertz...
DLA
Method
/
Active
This test is conducted for the purpose of determining the suitability of component parts and subassemblies of electrical and electronic components when subjected to...
DLA
Method
/
Active
This method establishes the procedure for classifying microcircuits according to their susceptibility to damage or degradation by exposure to electrostatic discharge...
DLA
Method
9 /
Active
The purpose of this test is to determine if the breakdown voltage of the field effect transistor or IGBT under the specified conditions is greater than the specified...
DLA
Method
1 / w/Change1
Active
The purpose of this test is to measure the input admittance of the field-effect transistor under the specified small-signal conditions.
DLA
Method
/ w/Change1
Active
The purpose of this examination is to nondestructively detect defects within the sealed case, especially those resulting from the sealing process, and internal defects...
DLA
Method
11 /
Active
HS1840ARH 16-channel. Parts were tested at low and high dose rate under biased and unbiased conditions as outlined in MIL-STD-883 Test Method 1019.7, to a maximum...
TD
/ 0
Active
The purpose of this test method is to measure directly the charge recovered from a semiconductor diode when it is rapidly switched from a forward biased condition to a...
DLA
Method
1 / w/Change3
Active
This test is conducted to determine the resistance of a part to extremes of high and low temperatures, and to the effect of alternate exposures to these extremes.
DLA
Method
9 /
Active
The purpose of this test is to measure the gate-to-source voltage or current of the field effect transistor or IGBT under the specified conditions.
DLA
Method
1 / w/Change1
Active