125 results found for MIL-STD-88
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
This is an internal visual inspection for use in destructive physical analysis (DPA) procedures. The purpose of this destructive test is to examine devices opened for...
DLA
Method
1 /
Active
High dose rate testing to 300 krad(Si) . Low dose rate testing to 150 krad(Si) . The high dose rate irradiations were done at 65 rad(Si)/s and the low dose rate work...
TD
/ 0
Active
The purpose of this test is to detect the presence of moisture trapped inside the microelectronic device package in sufficient quantity to adversely affect device...
DLA
Method
/
Active
The intermittent life test is performed for the purpose of determining a representative failure rate for microelectronic devices or demonstrating quality or...
DLA
Method
/
Active
The moisture resistance test is performed for the purpose of evaluating, in an accelerated manner, the resistance of component parts and constituent materials to the...
DLA
Method
7 /
Active
The purpose of this test is to visually inspect the internal materials, construction, and workmanship of hybrid, multichip and multichip module microcircuits.
DLA
Method
13 /
Active
This test procedure defines the requirements for measuring the dose rate response and upset threshold of packaged devices containing analog functions when exposed to...
DLA
Method
3 /
Active
This test is performed to determine the effectiveness of the seal of microelectronic devices.
DLA
Method
/
Active
This method establishes the means for assuring circuit performance to the limits specified in the applicable acquisition document in regard to LOW level input load...
DLA
Method
1 /
Active
This method establishes the means for measuring MOSFET threshold voltage. This method applies to both enhancement-mode and depletion-mode MOSFETs, and for both silicon...
DLA
Method
/
Active