125 results found for MIL-STD-883
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to nonionizing energy loss (NIEL) degradation.
DLA
Method
3 /
Active
This method established the means for measuring propagation delay of digital microelectronic devices, such as TTL, DTL, RTL, ECL, and MOS.
DLA
Method
1 /
Active
This method establishes the means of measuring the series impedance of the ground and power supply circuit pin configurations for packages used for complex, wide...
DLA
Method
2 /
Active
The purpose of this method is to define a technique for assuring a normal distribution for any test method listed in the 3000 or 4000 series of this standard. This...
DLA
Method
1 /
Active
This method establishes the means for assuring circuit performance to the limits specified in the applicable acquisition document in regard to HIGH level input load...
DLA
Method
2 /
Active
Both the IS-139ASRH and IS-139ASEH are wafer-by-wafer assurance tested per MIL-STD-883H at 300krad(Si) of HDR (50 to 300 rad(Si)/s. Only the IS-139ASEH is...
TD
/ 0.00
Active
This method tests the capability of a Plastic Encapsulated Microcircuit (PEM) to withstand moisture ingress and to detect flaws in packaging materials.
DLA
Method
2 /
Active
This method establishes the means for assuring circuit performance in regard to the test requirements necessary to verify the specified function and to assure that all...
DLA
Method
/
Active
This method provides a means of judging the quality and acceptability of device interconnect metallization on non-planar oxide integrated circuit wafers or dice.
DLA
Method
6 /
Active
This method establishes the means for assuring circuit performance to the limits specified in the applicable acquisition document in regard to output leakage current...
DLA
Method
/
Active