125 results found for MIL-STD-883
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to nonionizing energy loss (NIEL) degradation.
DLA
Method
3 /
Active
This test is conducted for the purpose of determining the ability of the microcircuit; to withstand the dynamic stress exerted by random vibration applied between...
DLA
Method
/
Active
This method specifies wafer fabrication control and wafer acceptance requirements for GaAs monolithic microcircuits for application in class level B or class level S...
DLA
Method
1 /
Active
Failure analysis is a post mortem examination of failed devices employing, as required, electrical measurements and many of the advanced analytical techniques of...
DLA
Method
/
Active
This method establishes the means for assuring circuit performance to the limits specified in the applicable acquisition document in regard to HIGH level output drive,...
DLA
Method
1 /
Active
This method establishes screening procedures for total lot screening of microelectronics to assist in achieving levels of quality and reliability commensurate with the...
DLA
Method
13 /
Active
This test procedure defines the detailed requirements for performing latchup testing of microcircuits to identify susceptibility to dose rate induced latchup.
DLA
Method
1 /
Active
The purpose of this test is to determine the integrity of materials and procedures used to attach semiconductor die or surface mounted passive elements to package...
DLA
Method
10 /
Active
This method establishes a drive source to be used in measuring dynamic performance of digital microelectronic devices, such as TTL, DTL, RTL, ECL, and MOS.
DLA
Method
1 /
Active
This method establishes the load conditions to be used in measuring the static and dynamic performance of digital microelectronic devices such as TTL, DTL, RTL, ECL,...
DLA
Method
1 /
Active