208 results found for MIL-STD-750
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
The purpose of this test method is to verify the construction and quality of workmanship in wafer, wafer dc testing, die inspection, and assembly processes to the...
DLA
Method
2 / A w/Change5
Active
The purpose of this test is to simulate stresses imposed on a surface mount device (SMD) during installation, operation, removal, and rework.
DLA
Method
1 / A w/Change5
Active
The purpose of this test is to nondestructively detect defects within the sealed case of a semiconductor device, especially those resulting from sealing of the lid to...
DLA
Method
6 / A w/Change4
Active
This test method provides a means of judging the quality and acceptability of metallization on semiconductor dice.
DLA
Method
5 / A w/Change4
Active
The purpose of this test is to measure the dc potential between the specified, open-circuited terminal and reference terminal when a dc potential is applied to the...
DLA
Method
1 / w/Change1
Active
The purpose of this test is to measure the drain reverse current of the field effect transistor or IGBT under the specified conditions.
DLA
Method
1 / w/Change1
Active
This test is performed to eliminate marginal semiconductor devices or those with defects resulting from manufacturing aberrations that are evidenced as time and stress...
DLA
Method
4 / A w/Change4
Active
The purpose of this test is to measure the reverse transfer capacitance of the field effect transistor under the specified conditions.
DLA
Method
/ w/Change1
Active
These procedures and criteria shall address probe testing and lot acceptance testing, element evaluation or equivalent for each wafer, or wafer lot as applicable...
DLA
Method
2 / w/Change1
Active
The purpose of this test is to measure the output admittance of the field-effect transistor under the specified small-signal conditions.
DLA
Method
/ w/Change1
Active