208 results found for MIL-STD-750
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
The purpose of this test method is to verify the workmanship of hermetically packaged semiconductor devices.
DLA
Method
10 / A w/Change5
Active
The MFR performed a internal qualification in accordance with MIL-PRF-38534 Element Evaluation. Testing was performed per MIL-STD-750. No form, fit or function will be...
Alert Documents
- /
Active
The purpose of this test is to determine if the breakdown voltage of the device under the specified conditions is greater than the specified minimum limit.
DLA
Method
1 / w/Change1
Active
The purpose of this test is to determine the capabilities of the device to withstand pulses.
DLA
Method
1 / w/Change1
Active
The purpose of this test is to verify the capability of a transistor to withstand pulses of specific voltage, current, and time, establishing a SOA.
DLA
Method
/ w/Change1
Active
The purpose of this test is to determine the drift of a parameter specified in the applicable specification sheet of the device.
DLA
Method
/ w/Change1
Active
The purpose of this test is to measure the input admittance of the device under the specified conditions.
DLA
Method
/ w/Change1
Active
The purpose of this test is to measure the reverse breakdown impedance of the device under smallsignal conditions.
DLA
Method
3 / w/Change3
Active
This test method is performed to determine the effectiveness of the seal of semiconductor devices. The immersion of the device under evaluation into liquid at widely...
DLA
Method
1 / A w/Change4
Active
The purpose of this test method is to measure the capacitance across the semiconductor device terminals under specified dc bias and ac signal voltages.
DLA
Method
1 / w/Change3
Active