208 results found for MIL-STD-750
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
The purpose of this test method is to determine if the breakdown voltage of the semiconductor device is greater than the specified minimum limit.
DLA
Method
2 / w/Change3
Active
This test method is designed to measure the breakdown voltage of voltage regulator and voltage-reference semiconductor devices under the specified conditions.
DLA
Method
/ w/Change3
Active
The purpose of this test is to measure the rectified microwave diode current under conditions for conversion loss.
DLA
Method
/ w/Change3
Active
The purpose of this test method is to monitor the semiconductor device parameter for a discontinuity under the specified conditions.
DLA
Method
1 / A w/Change4
Active
This test method is designed to measure the average reverse current through the device under the specified conditions.
DLA
Method
1 / w/Change3
Active
The purpose of this test method is to establish the integrity of the semiconductor die attachment to the package header or other substrate.
DLA
Method
3 / A w/Change5
Active
The purpose of this test method is to visually inspect glass–encased, double plug, noncavity, axial leaded semiconductor devices for cracks which may affect the...
DLA
Method
1 / A w/Change5
Active
The purpose of this test method is to verify the construction and quality of workmanship in wafer, wafer dc testing, die inspection, and assembly processes to the...
DLA
Method
2 / A w/Change5
Active
The purpose of this test is to simulate stresses imposed on a surface mount device (SMD) during installation, operation, removal, and rework.
DLA
Method
1 / A w/Change5
Active
The purpose of this test is to nondestructively detect defects within the sealed case of a semiconductor device, especially those resulting from sealing of the lid to...
DLA
Method
6 / A w/Change4
Active