460 results found for MIL-STD
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
This test is conducted for the purpose of determining the ability of the microcircuit; to withstand the dynamic stress exerted by random vibration applied between...
DLA
Method
/
Active
The purpose of this test is to measure the capacitance of component parts. Preferred test frequencies for this measurement are 60 Hz, 100 Hz, 120 Hz, 1 kHz, 100 kHz,...
DLA
Method
/
Active
The purpose of this test is to measure the pulse response (td(on), tr, td(off), tf) of power MOSFET or IGBT devices under specified conditions.
DLA
Method
2 / w/Change1
Active
This test method is conducted to determine the resistance of a semiconductor device to extremes of high and low temperatures, and to the effect of alternate exposures...
DLA
Method
9 / A w/Change4
Active
The purpose of this test is to verify the boundary of the SOA as constituted by the interdependency of the specified voltage, current, power, and temperature in a...
DLA
Method
1 / w/Change1
Active
This method specifies wafer fabrication control and wafer acceptance requirements for GaAs monolithic microcircuits for application in class level B or class level S...
DLA
Method
1 /
Active
This test is performed to evaluate the properties of materials used in components as they are influenced by the absorption and diffusion of moisture and moisture vapor.
DLA
Method
/
Active
The purpose of this test is to determine the magnitude of the negative resistance under the specified conditions.
DLA
Method
/ w/Change3
Active
Failure analysis is a post mortem examination of failed devices employing, as required, electrical measurements and many of the advanced analytical techniques of...
DLA
Method
/
Active
The salt atmosphere test, in which specimens are subjected to a fine mist of salt solution, has several useful purposes when utilized with full recognition of its...
DLA
Method
/
Active