208 results found for MIL-STD-750
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
The purpose of this test is to determine the thermal performance of transistor devices. This can be done in two ways, steady-state thermal impedance or thermal...
DLA
Method
6 / w/Change1
Active
The purpose of this test is to measure the thermal resistance of the device under the specified conditions.
DLA
Method
/ w/Change1
Active
This test method is intended to determine the ability of the semiconductor devices to withstand moderately severe shocks such as would be produced by rough handling,...
DLA
Method
2 / A w/Change5
Active
The purpose of this test is to measure the base to emitter voltage of the device in either a saturated or nonsaturated condition.
DLA
Method
1 / w/Change1
Active
The purpose of this test is to measure the time required for the junction to reach 63.2 percent of the final value of TJ change following application of a step...
DLA
Method
1 / w/Change1
Active
The purpose of this test is to measure the input resistance of the device under the specified conditions.
DLA
Method
1 / w/Change1
Active
This test method defines the requirements for testing discrete packaged semiconductor devices for ionizing radiation (total dose) effects from a Cobalt-60 (60Co) gamma...
DLA
Method
6 / A w/Change4
Active
The purpose of this test method is to establish a standard approach for conducting heavy ion irradiation of planar vertical power MOSFET semiconductor devices.
DLA
Method
1 / A w/Change4
Active
The purpose of this test is to measure the shunt capacitance of the input terminals of the device under the specified conditions.
DLA
Method
1 / w/Change1
Active
This test method is an accelerated laboratory corrosion test simulating the effects of seacoast atmospheres on semiconductor devices.
DLA
Method
4 / A w/Change4
Active