208 results found for MIL-STD-750
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
The purpose of this test is to measure the figure of merit of a semiconductor detector diode.
DLA
Method
1 / w/Change3
Active
This test method is proposed as an accelerated laboratory corrosion test simulating the effects of seacoast atmosphere on semiconductor devices.
DLA
Method
3 / A w/Change4
Active
This test is performed to eliminate marginal semiconductor devices or those with defects resulting from manufacturing aberrations that are evidenced as time and stress...
DLA
Method
5 / A w/Change4
Active
This purpose of this test method is to determine the repetitive inductive avalanche switching capability of power devices.
DLA
Method
/ w/Change1
Active
The purpose of this test method is to measure the forward impedance of the device under small-signal conditions.
DLA
Method
2 / w/Change3
Active
The purpose of this test is to determine the series resistance of the device under the specified conditions.
DLA
Method
/ w/Change3
Active
The purpose of this test is to measure the thermal impedance of the insulated gate bipolar transistors (IGBT) under the specified conditions of applied voltage,...
DLA
Method
/ w/Change1
Active
This test method is intended to detect any semiconductor device discontinuity "ringing" or shifting of the reverse dc voltage characteristic monitored during vibration.
DLA
Method
/ A w/Change4
Active
The purpose of this test is to measure the thermal resistance of thyristors under specified conditions
DLA
Method
/ w/Change1
Active
This test method is performed to determine whether semiconductor device terminations can withstand the effects of the heat to which they will be subjected during the...
DLA
Method
5 / A w/Change5
Active