267 results found for MIL-STD-883 method 2018
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
The base HS-26C32RH is acceptance tested on a wafer-by-wafer basis to 300krad(Si) at High Dose Rate (HDR) (50–300rad(Si)/s). At LDR, (0.01rad(Si)/s maximum). The...
TD
/ 0.00
Active
DLA
Detail / Drawing
D / -
Active
DLA
Detail / Drawing
B / -
Active
MNFR
Detail / Drawing
2 / -
Active
DLA
Detail / Drawing
C / -
Active
The base HS-26C32RH is acceptance tested on a wafer-by-wafer basis to 300krad(Si) at High Dose Rate (HDR) (50–300rad(Si)/s). At LDR, (0.01rad(Si)/s maximum). The...
TD
/ 0.00
Active
Parts were irradiated under bias and with all pins grounded at low dose rate and under bias at high dose rate perat 0.01rad(Si)/s and 50rad(Si)/s respectively. The low...
TD
/ 0.00
Active
Parts were tested at low and high dose rate under biased and unbiased. The low dose rate test was run to 50krad(Si); the high dose rate test was run to 450krad(Si).The...
TD
/ 0.00
Active
ADI
Detail / Drawing
E / -
Active