208 results found for MIL-STD-750
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
The purpose of this test is to measure the reverse blocking current under the specified conditions, using the dc method or the ac method, as applicable.
DLA
Method
1 / w/Change3
Active
The purpose of this test method is to measure the quality factor (Q) of the device. By definition, Q expresses the ratio of reactance to effective resistance of the...
DLA
Method
1 / w/Change3
Active
The purpose of this test is to measure the forward-current transfer ratio of the device under the specified conditions.
DLA
Method
1 / w/Change1
Active
The purpose of this test is to measure the maximum frequency of oscillation for the device under the specified conditions.
DLA
Method
/ w/Change1
Active
The purpose of this test is to measure the ratio of ac output power to the ac input power (usually specified in dB) under specified large-signal conditions.
DLA
Method
/ w/Change1
Active
The purpose of this test is to measure the ratio of the ac output power to the ac input power under the specified conditions (usually specified in dB) for small-signal...
DLA
Method
/ w/Change1
Active
The purpose of this test method is to determine compliance with the specified sample plan for semiconductor devices subjected to the specified conditions.
DLA
Method
/ A w/Change4
Active
The moisture resistance test is performed for the purpose of evaluating, in an accelerated manner, the resistance of semiconductor devices and constituent materials to...
DLA
Method
4 / A w/Change4
Active
The purpose of this test is to measure the resistance between the drain and source of the field effect transistor under the specified small-signal conditions.
DLA
Method
/ w/Change1
Active
The purpose of this test is to measure the thermal impedance of the MOSFET under the specified conditions of applied voltage, current, and pulse duration.
DLA
Method
1 / w/Change1
Active