1989 results found for MIL-STD-883 methods
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
The thin film corrosion test is performed for the purpose of demonstrating the quality or reliability of devices subjected to the specified conditions over a specified...
DLA
Method
/
Active
The purpose of this test is to inspect passive elements used for microelectronic applications, including RF/microwave, for the visual defects described herein.
DLA
Method
3 /
Active
The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to nonionizing energy loss (NIEL) degradation.
DLA
Method
3 /
Active
The purpose of this examination is to nondestructively detect unbonded regions, delaminations and/or voids in the die attach material and at interfaces within devices...
DLA
Method
2 /
Active
The purpose of this test is to describe requirements for performance of destructive physical analysis (DPA) for the applicable device class, for sampling, preparation,...
DLA
Method
1 /
Active
The purpose of this test is to check the internal materials, construction, and workmanship of microcircuits for compliance with the requirements of the applicable...
DLA
Method
14 /
Active
Environmental Test Method Standard for Microcircuits: Ionizing radiation (total dose) test procedure
This test procedure defines the requirements for testing packaged semiconductor integrated circuits for ionizing radiation (total dose) effects from a cobalt-60 (60Co)...
DLA
Method
9 /
Active
The purpose of this test is to visually inspect the internal materials, construction, and workmanship of hybrid, multichip and multichip module microcircuits.
DLA
Method
13 /
Active
The purpose of this test is to determine the effectiveness (hermeticity) of the seal of microelectronic devices with designed internal cavities.
DLA
Method
17 /
Active
This method establishes the requirements for the lot acceptance testing of microcircuit wafers intended for class level S use.
DLA
Method
8 /
Active