460 results found for MIL-STD

The purpose of this test is to measure the reverse breakdown impedance of the device under smallsignal conditions.

This method establishes the means for assuring circuit performance to the limits specified in the applicable acquisition document in regard to HIGH level input load...

This test method is performed to determine the effectiveness of the seal of semiconductor devices. The immersion of the device under evaluation into liquid at widely...

The purpose of this test method is to measure the capacitance across the semiconductor device terminals under specified dc bias and ac signal voltages.

The purpose of this test method establishes a baseline methodology for characterizing high-voltage transistors to high gamma dose rate radiation and for establishing...

Both the IS-139ASRH and IS-139ASEH are wafer-by-wafer assurance tested per MIL-STD-883H at 300krad(Si) of HDR (50 to 300 rad(Si)/s. Only the IS-139ASEH is...

The purpose of this test method is to determine the avalanche capability of diodes and rectifiers. The intent of the test is to stress the termination of the device.

This method tests the capability of a Plastic Encapsulated Microcircuit (PEM) to withstand moisture ingress and to detect flaws in packaging materials.

This method establishes the means for assuring circuit performance in regard to the test requirements necessary to verify the specified function and to assure that all...

This method provides a means of judging the quality and acceptability of device interconnect metallization on non-planar oxide integrated circuit wafers or dice.