208 results found for MIL-STD-750
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
The variable-frequency-vibration test method is performed for the purpose of determining the effect on semiconductor devices of vibration in the specified frequency...
DLA
Method
3 / A w/Change5
Active
The purpose of this test method is to verify the workmanship of hermetically packaged semiconductor devices.
DLA
Method
10 / A w/Change5
Active
The purpose of this test is to determine if the breakdown voltage of the device under the specified conditions is greater than the specified minimum limit.
DLA
Method
1 / w/Change1
Active
The purpose of this test is to determine the capabilities of the device to withstand pulses.
DLA
Method
1 / w/Change1
Active
The purpose of this test is to verify the capability of a transistor to withstand pulses of specific voltage, current, and time, establishing a SOA.
DLA
Method
/ w/Change1
Active
The purpose of this test is to determine the drift of a parameter specified in the applicable specification sheet of the device.
DLA
Method
/ w/Change1
Active
The purpose of this test is to measure the drain reverse current of the field effect transistor or IGBT under the specified conditions.
DLA
Method
1 / w/Change1
Active
This test is performed to eliminate marginal semiconductor devices or those with defects resulting from manufacturing aberrations that are evidenced as time and stress...
DLA
Method
4 / A w/Change4
Active
The purpose of this test is to measure the reverse transfer capacitance of the field effect transistor under the specified conditions.
DLA
Method
/ w/Change1
Active
These procedures and criteria shall address probe testing and lot acceptance testing, element evaluation or equivalent for each wafer, or wafer lot as applicable...
DLA
Method
2 / w/Change1
Active