208 results found for MIL-STD-750
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
The purpose of this test is to measure the thermal impedance of the insulated gate bipolar transistors (IGBT) under the specified conditions of applied voltage,...
DLA
Method
/ w/Change1
Active
This test method is intended to detect any semiconductor device discontinuity "ringing" or shifting of the reverse dc voltage characteristic monitored during vibration.
DLA
Method
/ A w/Change4
Active
The purpose of this test is to measure the thermal resistance of thyristors under specified conditions
DLA
Method
/ w/Change1
Active
This test method is performed to determine whether semiconductor device terminations can withstand the effects of the heat to which they will be subjected during the...
DLA
Method
5 / A w/Change5
Active
The purpose of this test is to measure the time required for the junction to reach 90 percent of the final value of junction temperature change following application...
DLA
Method
/ w/Change1
Active
The purpose of this test is to measure the input admittance of the device under the specified conditions.
DLA
Method
/ w/Change1
Active
The purpose of this test is to measure the reverse breakdown impedance of the device under smallsignal conditions.
DLA
Method
3 / w/Change3
Active
This test method is performed to determine the effectiveness of the seal of semiconductor devices. The immersion of the device under evaluation into liquid at widely...
DLA
Method
1 / A w/Change4
Active
The purpose of this test method is to measure the capacitance across the semiconductor device terminals under specified dc bias and ac signal voltages.
DLA
Method
1 / w/Change3
Active
The purpose of this test method establishes a baseline methodology for characterizing high-voltage transistors to high gamma dose rate radiation and for establishing...
DLA
Method
/ w/Change1
Active