MIL-STD-750, Method 3570 Transistor Electrical Test Methods for semiconductor Devices Part 3: GaAs field effect transistor (FET) forward gain (Mag S21)
General data
The purpose of this method establishes a basic test method, test setup, and procedure for measuring the forward gain (magnitude of S21) of GaAs FETs.
/ w/Change1
Active
09/12/2019 0:00:00
0 pages
Document history
Reference
MIL-STD-750, Method 3570
Document preview
Previous
{{docCtrl.currentPage}} of {{docCtrl.totalPages}} Pages
Next