MIL-STD-750, Method 3475 Transistor Electrical Test Methods for semiconductor Devices Part 3: Forward transconductance (pulsed dc method) of power mosfets or insulated gate bipolar transistors
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The purpose of this test method is to establish a basic test circuit for the purpose of establishing forward transconductance (gFS) using pulsed dc for the test conditions to enable measurements above the small signal (gFS) output current levels.
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MIL-STD-750, Method 3475
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