MIL-STD-750, Method 3478 Transistor Electrical Test Methods for semiconductor Devices Part 3: Power transistor electrical dose rate
General data
The purpose of this test method establishes a baseline methodology for characterizing high-voltage transistors to high gamma dose rate radiation and for establishing electrical criteria to evaluate key test fixture parameters.
/ w/Change1
Active
09/12/2019 0:00:00
0 pages
Document history
Reference
MIL-STD-750, Method 3478
Document preview
Previous
{{docCtrl.currentPage}} of {{docCtrl.totalPages}} Pages
Next