MIL-STD-750, Method 1080 Environmental Test Methods for Semiconductor Devices Part 1: Single–event burnout and single–event gate rupture
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The purpose of this test method is to establish a standard approach for conducting heavy ion irradiation of planar vertical power MOSFET semiconductor devices.
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MIL-STD-750, Method 1080
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MIL-STD-750, Method 1080
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