General data
Parts were irradiated under bias and with all pins grounded at low dose rate and under bias at high dose rate perat 0.01rad(Si)/s and 50rad(Si)/s respectively. The low dose rate test was run to 50krad(Si) and the high dose rate was run to 300krad(Si), with the high dose rate samples subjected to a high temperature anneal under bias at 100oC for 168 hours. All parameters remained within the SMD and data sheet post-irradiation limits at all downpoints.
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