Prototyping and Characterization of 1200V Schottky SiC Diode
- Posted by doEEEt Media Group
- On November 25, 2021
- 0
The study will be focused on the development of high voltage SiC Schottky diode in a package suitable for space application with the primary goal to characterize the performances of the devices in terms of switching capability, reliability of the technology, and preliminary characterization of static and dynamic parameters as a function of temperatures as well as to characterize the thermal impedance and resistance of the proposed package solution.