Automotive SiC module technology analysis and radiation testing

Posted by doEEEt Media Group
On September 22, 2022
0

Silicon MOSFETs are also capable of handling medium levels of power and overlap in functionality somewhat. With the introduction of the 800V the need of wide band Gap technologies such as the Silicon Carbide (SiC)-based substrates are fairly new and hold even more promise with power density at higher switching frequencies and with better thermal characteristics.

EEE Components, SiC Testing

Silicon Carbide (SiC): Properties and applications

Posted by Emilio Cano García
On March 10, 2022
0

Silicon Carbide (SiC) is characterized by a polymorphism structure in which there are 250 different crystal forms. Initially, when Edward Goodrich Acheson patented the method of making silicon carbide in powder form in 1893, it was used for abrasive applications. With the advancement of material technology, silicon carbide has been developed in different forms

SiC Testing

SiC Reliability Testing for Bepi Colombo

Posted by doEEEt Media Group
On February 12, 2022
0

These diodes have been designed for harsh environment space applications such as inner Solar System exploration probes. More specifically these diodes are being tested to be the blocking diodes of the solar panels for the Bepi Colombo mission.

EEE Components, PASSIVES, SiC Testing

SIC diodes versus Heavy Ions (SEE)

Posted by Juan Moreno Echarri
On February 5, 2022
0

Even if there are known weaknesses of SiC Schottky diodes while being biased at high voltage in dense ions environments, they can still be the best option for certain very demanding operational conditions. The compatibility of these devices is analysed in this technical note.

EEE Components, PASSIVES

SiC Junction Barrier Schottky (JBS) diodes up to 1.2kV

Posted by doEEEt Media Group
On December 21, 2021
0

The use of wide-bandgap materials, such as SiC, enables higher switching speeds and higher breakdown voltages, allowing for smaller, faster, more reliable, and more efficient power devices, and that’s why it is of interest in Space applications, where the operating conditions are extreme (high temperature and high radiation levels), is growing fast.

EEE Components, PASSIVES

Quad configuration SiC Schottky Diode

Posted by doEEEt Media Group
On December 21, 2021
0

The components are available in single-channel ATN-CNM-300S-2 and two channels ATN-CNM-300S-4; each channel has two SiC Schottky diodes in series, increasing the maximum safe blocking voltage of the device while operating under heavy ions. Actual flight radiation conditions can be tested under request as already performed successfully for the ESA-BepiColombo mission with a single die the previous version.

EEE Components, PASSIVES

SiC Schottky diodes under extreme temperatures

Posted by doEEEt Media Group
On December 21, 2021
0

Read and download the full datasheet of one of our components. This component also has been included in the ESCC 5106/022 specification, and listed in the EPPL (European Preferred Part List).

EEE Components, PASSIVES

High-Performance Power Supply Transformers for SiC MOSFET Gate Drivers

Posted by doEEEt Media Group
On December 2, 2021
0

The innovative WE-AGDT is a compact transformer in an EP7 package. It features a wide input voltage range from 9 to 36 V, a high saturation current of 4.5 A, as well as very low leakage inductance, and a very low capacitance of 6.8 pF between the windings. This gives rise to high common-mode transient immunity (CMTI) of the gate driver system.

ACTIVES, EEE Components

Electrical characterization of 1.2kV SiC Schottky diode at a wide temperature range

Posted by Javier Alejandro de la Ossa Fernández
On November 29, 2021
0

This article reports the results obtained from an electrical characterization under high temperatures (25°C and 100°C), where forward voltage and reserve current were monitored for a set of 130 devices. The optimization process for these devices reflects an excellent behavior in on mode and a right compromise in a reverse way for the chosen application.

ACTIVES, EEE Components

Prototyping a 1.2kV SiC Schottky diode for TWTAs

Posted by Javier Alejandro de la Ossa Fernández
On November 29, 2021
0

The importance of SiC devices in the power electronics field and how this can be particularly useful in space applications. Also, we set the foundations for a SiC diode that complies with the optimized performances needed for the rectifier module in the next generation of EPCs for TWTAs.

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