Radiation Hardened Integrated Circuits made in Germany

Posted by Manuel Padial Pérez
On June 21, 2021
0

SPACE IC includes in its portfolio three space/radiation-hardened integrated circuits: SPPL12420RH point of load converter, and SPLVDS031RH/SPLVDS032RH a pair of quad LVDS line driver and receiver

Optoelectronics Components Testing

Evaluation of Optoelectronics Components for Space Applications

Posted by doEEEt Media Group
On June 10, 2021
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Solutions offered by Alter Technology Laboratories COTS and PEMS Qualification Upscreening / Upgrading Evaluation of New Products EMC Simulation Engineering and Consultancy Environmental Testing Parts Procurement Management Laboratory Services

INSPECTION, ELECTRICAL & VERIFICATION, TESTING

Quality Issues in the procurement of Operational Amplifiers

Posted by Antonio Rodríguez Arenas
On April 20, 2021
0

The Quality Assurance in EEE parts is a major aspect to take care in the procurement for EEE parts. One family of EEE parts widely used are the Operational Amplifiers which are in much different equipment’s of satellites electronics

ACTIVES, EEE Components

Plastic Rad Tolerant Microchip Products for New Space

Posted by Manuel Padial Pérez
On February 26, 2021
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Microchip’s AVR8 ATmegaS64M1/ATmegaS128 and ARM32 M7 SAMV71Q21 Flight Models (FM) are available in ceramic package with screening equivalent to QML class Q and QML class V quality levels. Engineering samples are available as well. Developing radiation-hardened systems for space applications means long lead times and high cost toward achieving the necessary levels of reliability for multi-year missions in harsh environments.

SiC Testing

SiC Testing: Heavy ions test using SiC power devices

Posted by doEEEt Media Group
On February 19, 2021
0

New failure modes not observed in Silicon appear while testing SiC MOSFET and Schottky diodes and under heavy ions radiation. Gate damage in transistors remains undetected even monitoring drain current and gate leakage of the transistor under high voltage biasing conditions.

ALTER Innovation, ENDURANCE, ENVIRONMENTAL & RADIATION, TESTING

Radiation Test to study the radiation tolerance – ASIC for DAMPE Mission

Posted by doEEEt Media Group
On February 17, 2021
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Laser test was performed firstly to quality the SEL sensitivity because it is easy and ready at all times. Heavy ion beam teat was executed secondly to quantify the SEL tolerance of the ASICs.

ENGINEERING AND PROJECT MANAGEMENT SUPPORT

Post Procurement and Components Control/Validation

Posted by Susana Galdeano
On February 3, 2021
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Once the pre-procurement and procurement activities have been considered, the project manager and the different team members will ensure that the whole process to validate commercial components is performed accordingly in a timely manner.

ACTIVES, COTS, New Space, LEO Constellations, EEE Components

Q-TECH: RAD TOLERANT for LEO applications

Posted by Manuel Padial Pérez
On December 25, 2020
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Produced and tested on the same line as Q-tech most stringent space qualified oscillators, the parts proposed for LEO applications, QT780 SERIES, QT723 SERIES, QT735 SERIES are made with the same Q-Tech quality and reliability

ACTIVES, EEE Components, ENDURANCE, ENVIRONMENTAL & RADIATION, INSPECTION, ELECTRICAL & VERIFICATION, Non-standard testing, TESTING

Radiation Hardened SIC MOS Structures

Posted by doEEEt Media Group
On December 12, 2020
0

Project: PROTOTYPING AND CHARACTERISATION OF RADIATION HARDENED SIC MOS STRUCTURES, Customer: ESA (European Space Agency)

ACTIVES, EEE Components, ENDURANCE, ENVIRONMENTAL & RADIATION, INSPECTION, ELECTRICAL & VERIFICATION, Non-standard testing, TESTING

SiC Schottky Blocking Diode for BepiColombo Solar Array

Posted by doEEEt Media Group
On December 10, 2020
0

Alter Technology as reference test house Screening of a high number of devices under very harsh conditions: Custom testing setup High Temperature: 270ºC Low temp: -170ºC High Voltage tests: 250V High Power tests: 2.5A Long lasting tests with constant monitoring of electrical parameters and temperature of each single diode.

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