SiC Testing: Heavy ions test using SiC power devices
- Posted by doEEEt Media Group
- On February 19, 2021
- 0
New failure modes not observed in Silicon appear while testing SiC MOSFET and Schottky diodes and under heavy ions radiation. Gate damage in transistors remains undetected even monitoring drain current and gate leakage of the transistor under high voltage biasing conditions.