The behaviour of GaN power HEMTs subjected to short circuit

Posted by Omar CHIHANI
On October 26, 2022
0

This paper addresses the robustness of enhancement-mode GaN HEMTs under short circuit (SC) conditions. Single and repetitive SC using different voltages and durations have been applied in order to understand the behavior of those components while subjected to extreme conditions resulting in SC.

ACTIVES, EEE Components

Plastic RT PWM and FET Driver from Renesas for New Space

Posted by José Francisco Largaespada
On June 5, 2022
0

Space business is rapidly evolving towards what is usually called as “New Space”, covering smallsats to form large constellations or megaconstellations operating in multiple low Earth orbit (LEO) planes. This “New Space” tries to reach a more cost/efficiency ratio so that the monetary cost of the project is reduced as much as possible and guaranteeing its reliability.

ACTIVES, EEE Components, PASSIVES

GaN based 300W Ultra High Power Density Adapter; EMC and Filter Design Considerations

Posted by doEEEt Media Group
On March 24, 2022
0

Würth Elektronik Webinar with ON Semiconductor

The presented 300 W Ultra−high Power Density Adapter (UHPD) evaluation board demonstrates ON Semiconductor’s high-performance controllers, drivers and discrete semiconductor content capabilities that enable efficient UHPD designs implementation. This reference design includes the Synchronous PFC boost converter which is operating in the Discontinuous Conduction or Critical Conduction Mode (DCM/...

EEE Components, PASSIVES

Wide Bandgap Materials.

Posted by doEEEt Media Group
On March 17, 2022
0

Silicon has been the leading semiconductor material for more than 50 years, and has been one of the primary building blocks of the modern computing and power electronics industries.

ACTIVES, EEE Components, PASSIVES

Electrical equipment evolution in civil aeronautics

Posted by doEEEt Media Group
On September 7, 2021
0

For many years, aircraft manufacturers have been moving toward a more electric aircraft, gradually replacing equipment traditionally powered by mechanical or hydraulic power with electric power

ALTER Laboratory Services, INSPECTION, ELECTRICAL & VERIFICATION, TESTING, WEBINAR

Webinar – GaN for space applications

Posted by doEEEt Media Group
On September 14, 2020
0

This webinar provides an overview of GaN technology in space applications and presents an example of the tests are required for GaN components to be used in an space mission.

EEE Components, PASSIVES

KEMET Releases High Capacitance and High Voltage Tantalum Polymer Stacked Capacitors

Posted by Kemet Electronic Corporation
On August 10, 2020
0

KEMET, a leading global supplier of electronic components, continues to develop and design solutions suited for alternative energy, industrial/lighting, medical, defense and aerospace, and telecommunications applications with the new Tantalum Stack Polymer (TSP) O 7360-43 and the 82uF/75V rated voltage extension in Polymer Hermetically Sealed.

EEE Components, PASSIVES

Kemet Hermetically Sealed Tantalum Polymer Capacitors for GaN Devices

Posted by Kemet Electronic Corporation
On August 10, 2020
0

Gallium Nitride semiconductors allow designers to operate at higher frequencies and voltages than their silicon counterparts, enabling power management systems that are smaller and more efficient. These new designs also require capacitors that can operate at these higher frequencies and provide stable performance at the voltages that GaN devices typically operate at.

KEMET’s polymer tantalum capacitors...

EEE Components, PASSIVES

Capacitance Package, Minimizing Footprint while Maximizing

Posted by Kemet Electronic Corporation
On April 17, 2020
0

KEMET KONNEKT™ package allows two to four ceramic capacitors to be stacked vertically or horizontally while retaining the integrity of the part. It uses transient liquid phase sintering (TLPS) technology to bond component terminations together. The KONNEKT™ U2J capacitors can be used in both orientations, thus minimizing the component footprint, while maximizing the bulk capacitance of a stacked MLCC with design flexibility in mind.

GaN Testing

The 2020 top technology trends in GaN power devices

Posted by doEEEt Media Group
On March 23, 2020
0

GaN power transistors will be the transistor of choice on the rollout of 5G because of power density, energy efficiency, and system size requirements for macro and micro base stations for broadband delivery. GaN RF transistors will play an important part for the power amplifiers of those base stations.