Prototyping a 1.2kV SiC Schottky diode for TWTAs
- Posted by Javier Alejandro de la Ossa Fernández
- On November 29, 2021
- 0
The importance of SiC devices in the power electronics field and how this can be particularly useful in space applications. Also, we set the foundations for a SiC diode that complies with the optimized performances needed for the rectifier module in the next generation of EPCs for TWTAs.