Electrical characterization of 1.2kV SiC Schottky diode at a wide temperature range
This article reports the results obtained from an electrical characterization under high temperatures (25°C and 100°C), where forward voltage and reserve current were monitored for a set of 130 devices. The optimization process for these devices reflects an excellent behavior in on mode and a right compromise in a reverse way for the chosen application.
Copy and paste this URL into your WordPress site to embed
Copy and paste this code into your site to embed