Radiation Hardened SIC MOS Structures

Project: Prototyping and Characterization of Radiation Hardened SIC MOS Structures 

Characterization of Radiation Hardened SIC MOS Structures

Key elements

• -Full characterization of several foundries comprising oxidation processing, packaging approach, etc.
• -To consolidate test methods and associated standards for SiC characterization

TID and HIF Sensitivity evaluation of SiC MOSFET body diodes 

• Several Single Die MOSFETs packaged in DIL -> Heavy Ions Testing of several structures at the same time
• Different channel lengths and widths in the same die for radiation sensitivity evaluation
• Different dice of several oxide types for oxide radiation sensitivity evaluation
• Body diodes to be packaged separately in suitable HV packages to allow HV under heavy ions testing
• Different epilayers were used. Quality of epilayer evaluation
• Different raw materials: Evaluation of water quality and of its impact on radiation hardness