SiC Junction Barrier Schottky (JBS) diodes up to 1.2kV

Posted by doEEEt Media Group
On December 21, 2021
0

The use of wide-bandgap materials, such as SiC, enables higher switching speeds and higher breakdown voltages, allowing for smaller, faster, more reliable, and more efficient power devices, and that’s why it is of interest in Space applications, where the operating conditions are extreme (high temperature and high radiation levels), is growing fast.

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Quad configuration SiC Schottky Diode

Posted by doEEEt Media Group
On December 21, 2021
0

The components are available in single-channel ATN-CNM-300S-2 and two channels ATN-CNM-300S-4; each channel has two SiC Schottky diodes in series, increasing the maximum safe blocking voltage of the device while operating under heavy ions. Actual flight radiation conditions can be tested under request as already performed successfully for the ESA-BepiColombo mission with a single die the previous version.

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SiC Schottky diodes under extreme temperatures

Posted by doEEEt Media Group
On December 21, 2021
0

Read and download the full datasheet of one of our components. This component also has been included in the ESCC 5106/022 specification, and listed in the EPPL (European Preferred Part List).

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KEMET Extends KC-LINK™ MLCC C0G Range Using KONNEKT™ High-Density Packaging Technology

Posted by Kemet Electronic Corporation
On December 17, 2021
0

KEMET Corporation a leading global supplier of electronic components continues to strengthen its power conversion solutions by extending its popular MLCC C0G capacitors KC-LINK range using KONNEKT high-density packaging technology to meet the growing demand for fast-switching wide bandgap (WBG) semiconductors, EV/HEV, LLC resonant converters, and wireless charging applications.

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Charging Function and NFC Combined Wireless Power Transfer Coil

Posted by doEEEt Media Group
On December 17, 2021
0

Würth Elektronik expands its portfolio of wireless power coils. WE-WPCC WPT/NFC combines wireless power transmission with the Near Field Communication (NCF) standard thus enabling, for example, the combination of a charging station for smartphones with identification and payment functions.

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Vishay Extends Resistance Range of 1206 AT Precision Series Thin Film Chip Resistors

Posted by doEEEt Media Group
On December 4, 2021
0

Vishay Extends Resistance Range Of 1206 AT Precision Series Thin Film Chip Resistors. The resistor features an operating voltage of 200 V, the power rating of 400 mW at +70 °C ambient temperature, and operates over a -55 °C to +155 °C temperature range. The device is AEC-Q200 qualified and RoHS-compliant.

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High-Performance Power Supply Transformers for SiC MOSFET Gate Drivers

Posted by doEEEt Media Group
On December 2, 2021
0

The innovative WE-AGDT is a compact transformer in an EP7 package. It features a wide input voltage range from 9 to 36 V, a high saturation current of 4.5 A, as well as very low leakage inductance, and a very low capacitance of 6.8 pF between the windings. This gives rise to high common-mode transient immunity (CMTI) of the gate driver system.

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Metal Composite Power Inductors Explained

Posted by doEEEt Media Group
On November 26, 2021
0

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MLCC Capacitors Show Potential as Electrocaloric Cooling Components

Posted by doEEEt Media Group
On November 26, 2021
0

The MLCCs are assembled onto the plates to form the top and bottom EC modules containing five and four MLCCs, respectively. The bottom module has an aluminum plate-fin heat sink at each end to facilitate temperature stability.

EEE Components, PASSIVES

TDK Offers High-Current Low-Inductance Power Inductors

Posted by doEEEt Media Group
On November 26, 2021
0

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