High-Performance Power Supply Transformers for SiC MOSFET Gate Drivers
- Posted by doEEEt Media Group
- On December 2, 2021
- 0
The innovative WE-AGDT is a compact transformer in an EP7 package. It features a wide input voltage range from 9 to 36 V, a high saturation current of 4.5 A, as well as very low leakage inductance, and a very low capacitance of 6.8 pF between the windings. This gives rise to high common-mode transient immunity (CMTI) of the gate driver system.