Engineers develop method to improve efficiency and heat tolerance of film capacitors

Posted by doEEEt Media Group
On February 17, 2022
0

Researchers at The Pennsylvania State University have developed a new method of electric storage efficiency for film capacitors using nanofillers at low volume content in a high-temperature semi-crystalline polymer.

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Capacitor Ripple Current, Transient and Power Load Rating Explained

Posted by doEEEt Media Group
On February 17, 2022
0

Capacitors are naturally limited by its capability to handle/dissipate ripple current and pulse energy load. The limitation may be significantly different by each capacitor technology but also within a specific product type individual series.

ACTIVES, EEE Components, PASSIVES, SPECIFICATIONS / QPLs

Issue 223 of ESCC QUALIFIED PART LIST (QPL)

Posted by Javier Alejandro de la Ossa Fernández
On January 21, 2022
0

The changes in issue 222 of ESCC QUALIFIED PART LIST (QPL) are included in the DCR 1465 and detailed herein below

ACTIVES, EEE Components, SPECIFICATIONS / QPLs

Issue 43 of EUROPEAN PREFERRED PARTS LIST (EPPL)

Posted by Emilio Cano García
On January 21, 2022
0

The changes in issue 43 of EUROPEAN PREFERRED PARTS LISTS (EPPL) are included in the DCR 1476 and detailed in this post

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Hi-Rel Intermediate bus converter and point of load

Posted by Manuel Padial Pérez
On December 11, 2021
0

The evolution of power distribution in the spacecraft goes into a modular architecture direction. Especially the secondary power distribution from the satellite bus to the modules can be made more efficient by applying modular design and standard power interfaces.

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Electrical characterization of 1.2kV SiC Schottky diode at a wide temperature range

Posted by Javier Alejandro de la Ossa Fernández
On November 29, 2021
0

This article reports the results obtained from an electrical characterization under high temperatures (25°C and 100°C), where forward voltage and reserve current were monitored for a set of 130 devices. The optimization process for these devices reflects an excellent behavior in on mode and a right compromise in a reverse way for the chosen application.

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Prototyping a 1.2kV SiC Schottky diode for TWTAs

Posted by Javier Alejandro de la Ossa Fernández
On November 29, 2021
0

The importance of SiC devices in the power electronics field and how this can be particularly useful in space applications. Also, we set the foundations for a SiC diode that complies with the optimized performances needed for the rectifier module in the next generation of EPCs for TWTAs.

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SMD Inductor in 7575 Case Size

Posted by doEEEt Media Group
On November 26, 2021
0

The inductor released today is optimized for energy storage in DC/DC converters up to 2 MHz and high current filtering applications up to the SRF of the inductor. Applications for the device include notebooks, desktops, and servers; low profile, high current power supplies; POL converters; battery-powered devices; and distributed power systems and FPGAs.

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Prototyping and Characterization of 1200V Schottky SiC Diode

Posted by doEEEt Media Group
On November 25, 2021
0

The study will be focused on the development of high voltage SiC Schottky diode in a package suitable for space application with the primary goal to characterize the performances of the devices in terms of switching capability, reliability of the technology, and preliminary characterization of static and dynamic parameters as a function of temperatures as well as to characterize the thermal impedance and resistance of the proposed package solution.

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High Voltage Resistors For Custom Power Supplies

Posted by doEEEt Media Group
On November 23, 2021
0

Almost every application for resistors in power supply design has different specification priorities and performance requirements: high voltage, current and power, low tolerances

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