SiC reliability: Defects detection test for SiC devices

Posted by Juan Moreno Echarri
On October 26, 2022
0

Screening is paramount to achieving this SiC reliability level requested by all industries, and for some specific niche applications, special precautions should be taken into consideration.

ALTER Laboratory Services, SiC Testing, TESTING

Automotive SiC module technology analysis and radiation testing

Posted by doEEEt Media Group
On September 22, 2022
0

Silicon MOSFETs are also capable of handling medium levels of power and overlap in functionality somewhat. With the introduction of the 800V the need of wide band Gap technologies such as the Silicon Carbide (SiC)-based substrates are fairly new and hold even more promise with power density at higher switching frequencies and with better thermal characteristics.

SiC Testing

Testing SiC Schottky Diodes for Heavy Ions Optimization

Posted by Juan Moreno Echarri
On August 9, 2022
0

SiC Schottky diodes have certain limitations in terms of reverse voltage bias in heavy ions environments. However, they can still be the best option for certain very demanding operational conditions.

EEE Components, SiC Testing

Silicon Carbide (SiC): Properties and applications

Posted by Emilio Cano García
On March 10, 2022
0

Silicon Carbide (SiC) is characterized by a polymorphism structure in which there are 250 different crystal forms. Initially, when Edward Goodrich Acheson patented the method of making silicon carbide in powder form in 1893, it was used for abrasive applications. With the advancement of material technology, silicon carbide has been developed in different forms

SiC Testing

SiC Reliability Testing for Bepi Colombo

Posted by doEEEt Media Group
On February 12, 2022
0

These diodes have been designed for harsh environment space applications such as inner Solar System exploration probes. More specifically these diodes are being tested to be the blocking diodes of the solar panels for the Bepi Colombo mission.

EEE Components, PASSIVES, SiC Testing

SIC diodes versus Heavy Ions (SEE)

Posted by Juan Moreno Echarri
On February 5, 2022
0

Even if there are known weaknesses of SiC Schottky diodes while being biased at high voltage in dense ions environments, they can still be the best option for certain very demanding operational conditions. The compatibility of these devices is analysed in this technical note.

SiC Testing

SiC Testing: Heavy Ions tolerant SiC diodes

Posted by doEEEt Media Group
On October 4, 2021
0

Alter RADNEXT Transnational Access reviewers have accepted technology HISiC (Heavy Ions tolerant SiC diodes configurations) project proposal with H2020 funding. SiC weakness under heavy ions radiation is not a secret. The radiation improved SiC multi-die configuration modules will be tested in this project, demonstrating SOAs (Safe Operating Area) up to voltages requested by industry.

SiC Testing

Silicon Carbide Power Diodes

Posted by doEEEt Media Group
On August 12, 2021
0

The Silicon Carbide power diodes were specifically designed for protection of solar cells arrays in solar panels mounted in satellites and space exploration modules. The first batches of devices are currently used for two European Space Agency missions, BepiColombo and Solar Orbiter.

SiC Testing

SiC Testing: Heavy ions test using SiC power devices

Posted by doEEEt Media Group
On February 19, 2021
0

New failure modes not observed in Silicon appear while testing SiC MOSFET and Schottky diodes and under heavy ions radiation. Gate damage in transistors remains undetected even monitoring drain current and gate leakage of the transistor under high voltage biasing conditions.

SiC Testing

SiC Testing and Properties

Posted by doEEEt Media Group
On December 11, 2020
0

Space qualified silicon carbide power diodes developed by CNM-CSIC in collaboration with ALTER TECHNOLOGY will be handled as ALTER TECHNOLOGY specific product for high reliability and harsh environment-related markets.