SiC Junction Barrier Schottky (JBS) diodes up to 1.2kV

Compared with traditional silicon-based technology, the use of wide-bandgap materials, such as SiC, enables higher switching speeds and higher breakdown voltages, allowing for smaller, faster, more reliable, and more efficient power devices, and that’s why it is of interest in Space applications, where the operating conditions are extreme (high temperature and high radiation levels), is growing fast.

Alter Technology and the CNM have been working to develop a SiC Junction Barrier Schottky diode that exhibits low forward voltage and a superb high-temperature (-55°C to +130°C) performance. The radiation tolerance, both for protons and gamma, of these diodes has been proved.

Alter Technology’s 1.2 kV SiC Schottky diode product line includes three through-hole, TO-254, and TO-257 devices with 2.5A and 3A current ratings, as well as one surface-mount device with an LCC-2 package. Operating junction temperature goes from -55°C to +125°C to -170°C to +270°C.

Ready for Space applications, the company’s EPPL-certified solution is available in 300V.

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Prototyping a 1.2kV SiC Schottky diode for TWTAs